Bi−Directional Surge Protector

IPP

IPP

V

I

IR

IT

IT

IR

VRWM

VC VBR

VRWM

VC

VBR

ESDL3141

www.onsemi.com

2

ELECTRICAL CHARACTERISTICS

(TA = 25C unless otherwise noted)

Symbol

Parameter

IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM

Working Peak Reverse Voltage

IR

Maximum Reverse Leakage Current @ VRWM

VBR

Breakdown Voltage @ IT

IT

Test Current

*See Application Note AND8308/D for detailed explanations of

datasheet parameters.

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise specified)

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse Working Voltage

VRWM

Pin 2 to Pin 1

Pin 1 to Pin 2

14

5

V

Breakdown Voltage

VBR

IT = 10 mA, Pin 2 to Pin 1

IT = 1 mA, Pin 2 to Pin 1

IT = 1 mA, Pin 1 to Pin 2

14.1

13.75

5.5

15.3

14.5

7.0

17.5

16.5

8.2

V

Reverse Leakage Current

IR

@ 3.3 V, Pin 2 to Pin 1

@ 14 V, Pin 2 to Pin 1

@ 5.0 V, Pin 1 to Pin 2

0.1

2.0

0.1

mA

Clamping Voltage

VC

Per IEC61000−4−2, 8 kV Contact

See Figures 1 & 2

V

Clamping Voltage TLP

(Note 1)

VC

IPP = 8 A IEC61000−4−2 Level 2 Equivalent

(4 kV Contact, 8 kV Air)

(Pin 2 to Pin 1)

(Pin 1 to Pin 2)

17.9

8.85

V

IPP = 16 A IEC61000−4−2 Level 4 Equivalent

(8 kV Contact, 16 kV Air)

(Pin 2 to Pin 1)

(Pin 1 to Pin 2)

19.3

10.9

V

Reverse Peak Pulse Current

IPP

IEC61000−4−5 (8x20 ms) Pin 2 to Pin 1

IEC61000−4−5 (8x20 ms) Pin 1 to Pin 2

10

13.5

12

16.5

A

Clamping Voltage 8x20 ms

Waveform per Figure A (Note 2)

VC

IPP = 10 A (Pin 2 to Pin 1)

IPP = 13.5 A (Pin 1 to Pin 2)

19.5

12.3

21.5

14

V

Dynamic Resistance

RDYN

I/O Pin to GND (8x20 ms)

(Pin 2 to Pin 1)

(Pin 1 to Pin 2)

0.35

0.52

W

Junction Capacitance

CJ

VR = 0 V, f = 1 MHz

1.4

1.75

pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.

TLP conditions: Z0 = 50, tp = 100 ns, tr = 1 ns, averaging window; t1 = 70 ns to t2 = 90 ns.

2. Non−repetitive current pulse at TA = 25C, per IEC61000−4−5 waveform.