IXYS reserves the right to change limits, test conditions, and dimensions.

IXFK 48N60P IXFX 48N60P

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ. Max.

g

fs

V

35

53

S

C

iss

8860

pF

C

oss

V

GS

= 0 V, V

850

pF

C

rss

60

pF

t

d(on)

30

ns

t

r

V

25

ns

t

d(off)

R

G

= 2

Ω (External)

85

ns

t

f

22

ns

Q

g(on)

150

nC

Q

gs

V

50

nC

Q

gd

50

nC

R

thJC

0.15

° C/W

R

thCs

TO-264 and PLUS247

0.15

° C/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

Min.

Typ. Max.

I

S

V

48

A

I

SM

Repetitive

110

A

V

SD

I

1.5

V

Pulse test, t

≤300 µs, duty cycle d≤ 2 %

t

rr

I

200

ns

Q

RM

V

0.8

µC

I

RM

6.0

A

IXYS MOSFETs and IGBTs are covered by 4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2

TO-264 (IXFK) Outline

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.83

5.21

.190

.205

A

1

2.29

2.54

.090

.100

A

2

1.91

2.16

.075

.085

b

1.14

1.40

.045

.055

b

1

1.91

2.13

.075

.084

b

2

2.92

3.12

.115

.123

C

0.61

0.80

.024

.031

D

20.80

21.34

.819

.840

E

15.75

16.13

.620

.635

e

5.45 BSC

.215 BSC

L

19.81

20.32

.780

.800

L1

3.81

4.32

.150

.170

Q

5.59

6.20

.220 0.244

R

4.32

4.83

.170

.190

Terminals: 1 - Gate

2 - Drain (Collector)

3 - Source (Emitter)

4 - Drain (Collector)