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2SA1832
2003-03-27
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1832
Audio Frequency General Purpose Amplifier Applications
· High voltage and high current: VCEO = −50 V, IC = −150 mA (max)
· Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA)
= 0.95 (typ.)
· High hFE: hFE = 70~400
· Complementary to 2SC4738
· Small package
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
-50
V
Collector-emitter voltage
VCEO
-50
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-150
mA
Base current
IB
-30
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = -50 V, IE = 0
¾
¾
-0.1
mA
Emitter cut-off current
IEBO
VEB = -5 V, IC = 0
¾
¾
-0.1
mA
DC current gain
hFE
(Note)
VCE = -6 V, IC = -2 mA
70
¾
400
Collector-emitter saturation voltage
VCE (sat)
IC = -100 mA, IB = -10 mA
¾
-0.1
-0.3
V
Transition frequency
fT
VCE = -10 V, IC = -1 mA
80
¾
¾
MHz
Collector output capacitance
Cob
VCB = -10 V, IE = 0, f = 1 MHz
¾
4
7
pF
Note: hFE classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400
( ) marking symbol
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2H1A
Weight: 2.4 mg (typ.)
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