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2SC5823 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # 2SC5823
Description  Switching Regulator Applications
PDF  4 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SC5823 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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2SC5823
No.7785-2/4
1.2
2.0
1.6
0.8
0.4
0
02
6
48
13
7
59
10
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V IT06213
IB=0
10mA
20mA
50mA
100mA
150mA
200mA
250mA
300mA
350mA
1.0
1.8
1.4
0.6
0.2
IT06214
1.5
2.0
1.0
0.5
0
0
0.2
0.4
0.6
0.8
1.0
1.4
1.2
IC -- VBE
Base-to-Emitter Voltag, VBE -- V
VCE=5V
400mA
450mA
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
700
V
Collector-to-Emitter Voltage
VCEO
400
V
Emitter-to-Base Voltage
VEBO
8V
Collector Current
IC
1.5
A
Collector Current (Pulse)
ICP
PW
≤300µs, duty cycle≤10%
3
A
Base Current
IB
0.7
A
Collector Dissipation
PC
1.0
W
Tc=25
°C10
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=400V, IE=0
10
µA
Emitter Cutoff Current
IEBO
VEB=5V, IC=0
10
µA
hFE1VCE=5V, IC=0.1A
20
50
DC Current Gain
hFE2VCE=5V, IC=0.7A
10
hFE3VCE=5V, IC=1mA
10
Gain-Bandwidth Product
fT
VCE=10V, IC=0.1A
20
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
10
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=0.7A, IB=0.14A
0.8
V
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=0.7A, IB=0.14A
1.5
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=1mA, IE=0
700
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=5mA, RBE=∞
400
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=1mA, IC=0
8
V
Turn-On Time
ton
IC=1A, IB1=0.2A, IB2=--0.4A,RL=200Ω, VCC=200V
0.5
µs
Storage Time
tstg
IC=1A, IB1=0.2A, IB2=--0.4A,RL=200Ω, VCC=200V
2.5
µs
Fall Time
tf
IC=1A, IB1=0.2A, IB2=--0.4A,RL=200Ω, VCC=200V
0.25
µs
Switching Time Test Circuit
VR
RB
VCC=200V
VBE= --5V
+
+
50
Ω
INPUT
OUTPUT
RL
100
µF
470
µF
PW=20
µs
IB1
D.C.
≤1%
IB2



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