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C3D06060A Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # C3D06060A
Description  Silicon Carbide Schottky Diode
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

C3D06060A Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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Silicon Carbide Schottky Diode
C3D06060A
www.iscsemi.com
1
FEATURES
· High-Frequency Operation
· 600V Schottky Rectifier
· Positive Temperature Coefficient on VF
· No Reverse Recovery
MECHANICAL CHARACTERISTICS
· Replace Bipolar with Unipolar Rectifiers
· Higher Efficiency
· Parallel Devices Without Thermal Runaway
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VR
DC Blocking Voltage
600
V
IF(AV)
Average Rectified Forward Current
19
A
IFSM
Nonrepetitive Peak Surge Current
10ms, Half Sine Wave
63
A
TJ
Junction Temperature
-55~175
℃
Tstg
Storage Temperature Range
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.7
℃
/W


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