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ACS402-5SB4 Datasheet(PDF) 2 Page - STMicroelectronics |
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ACS402-5SB4 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 6 page ![]() ACS402-5SB4 2/6 Symbol Parameter Value Unit VDRM VRRM Repetitive peak off-state voltage Tj = 25 °C 500 V IT(RMS) RMS on-state current full cycle sine wave 50 to 60 Hz per switch Tamb = 90 °C 0.2 A total array Tamb = 75 °C 0.4 A ITSM Non repetitive surge peak on-state current Tj initial = 25°C, full cycle sine wave F =50 Hz 5 A F =60 Hz 5.5 A dI/dt Critical rate of rise of on-state current IG = 20mA with tr = 100ns Repetitive F =120 Hz 20 A/ µs VPP Non repetitive line peak pulse voltage note 1 2kV Tstg Storage temperature range - 40 to + 150 °C Tj Operating junction temperature range 0 to + 110 °C Tl Maximum lead temperature for soldering during 10s 260 °C note 1 : according to test described by IEC 1000-4-5 standard & Figure 3. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit PG (AV) Average gate power dissipation 0.1 W IGM Peak gate current (tp = 20µs) 1 A VGM Peak positive gate voltage (respect to the pin COM) 5 V SWITCH GATE CHARACTERISTICS (maximum values) Symbol Parameter Value Unit Rth (j-a) Junction to ambient 90 °C/W THERMAL RESISTANCE Symbol Test conditions Values Unit IGT VD = 12V (DC) RL = 140 Ω Tj=25°C MAX 10 mA VGT VD = 12V (DC) RL = 140 Ω Tj=25°C MAX 1 V VGD VOUT =VDRM RL = 3.3k Ω Tj=110°C MIN 0.2 V IH IOUT = 100mA gate open Tj=25°C TYP 25 mA MAX 60 mA IL IG = 20mA Tj=25°C TYP 30 mA MAX 65 mA VTM IOUT = 0.3A tp = 380 µs Tj=25°C MAX 1.1 V IDRM IRRM VOUT =VDRM VOUT =VRRM Tj=25°C MAX 2 µA Tj=110°C MAX 50 µA dV/dt VOUT = 400V gate open Tj=110°C MIN 500 V/ µs (dI/dt)c (dVOUT/dt)c = 10V/ µs Tj=110°C MIN 0.1 A/ms VCL ICL = 1mA tp = 1ms Tj=25°C TYP 600 V ELECTRICAL CHARACTERISTICS PER SWITCH For either positive or negative polarity of pin OUT1, OUT2, OUT3, OUT4 voltage respect to pin COM voltage |
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