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STB200N4F3 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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STB200N4F3 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc N-Channel MOSFET Transistor STB200N4F3 www.iscsemi.com 1 FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 4.0mΩ(Max)@VGS= 10V APPLICATION · Motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 120 A IDM Drain Current-Single Pulse 480 A PD Total Dissipation @TC=25℃ 300 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal Resistance, Junction to Case 0.5 ℃ /W 2 2 3 1 |
Similar Part No. - STB200N4F3 |
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Similar Description - STB200N4F3 |
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