AM1011-070 datasheet(1/4 Pages) STMICROELECTRONICS

Part #	AM1011-070

Description	RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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RF & MICROWAVE TRANSISTORS

September 1992

L-BAND AVIONICS APPLICATIONS

.400 x . 400 2NLFL (S042)

hermetically sealed

.

REFRACTORY/GOLD METALLIZATION

.

EMITTER SITE BALLASTED

.

LOW THERMAL RESISTANCE

.

INPUT/OUTPUT MATCHING

.

OVERLAY GEOMETRY

.

METAL/CERAMIC HERMETIC PACKAGE

.

POUT

= 70 W MIN. WITH 6.7 dB GAIN

DESCRIPTION

The AM1011-070 device is a high power Class

C transistor specifically designed for L-Band

Avionics transponder/interrogator pulsed output

and driver applications.

This device is capable of operation over a wide

range of pulse widths, duty cycles and tempera-

tures and is capable of withstanding severe output

VSWR at rated RF conditions. Low RF thermal

resistance and computerized automatic wire bond-

ing techniques ensure high reliability and product

consistency.

The AM1011-070 is supplied in the AMPAC

™ Her-

metic M etal/Ceramic package with i nternal

Input/Output matching structures.

PIN CONNECTION

BRANDING

1011-70

ORDER CODE

AM1011-70

ABSOLUTE MAXIMUM RATINGS (Tcase

= 25°C)

Symbol

Parameter

Value

Uni t

PDISS

Power Dissipation*

(TC

≤ 100°C)

200

W

IC

Device Current*

8.0

A

VCC

Collector-Supply Voltage*

32

V

TJ

Junction Temperature (Pulsed RF Operation)

250

°C

TSTG

Storage Temperature

− 65 to +200

°C

RTH(j-c)

Junction-Case Thermal Resistance*

0.68

°C/W

*Applies only to rated RF amplifier operation

AM1011-070

1. Collector

3. Emitter

2. Base

4. Base

THERMAL DATA

1/4

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