4

TUSB321

SLLSEO6C – JUNE 2015 – REVISED AUGUST 2018

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Copyright © 2015–2018, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Supply voltage

VDD

–0.3

6

V

Control pins

PORT, CURRENT_MODE, ID, DIR, VCONN_FAULT

–0.3

VDD + 0.3

V

CC1, CC2

–0.3

6

OUT1, OUT2

–0.3

VDD + 0.3

VBUS_DET

–0.3

4

Storage temperature, Tstg

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±7000

V

Charged-device model (CDM), per JEDEC specification JESD22-

C101(2)

±1500

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VDD

Supply voltage range

4.5

5.5

V

VBUS

System VBUS voltage

4

5

28

V

VBUS_DET

VBUS_DET threshold voltage on the pin

4

V

VCONN

Supply for active cable (With VDD at 5 V)

4.75

5.5

V

TA

Operating free air temperature range

0

25

70

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and C Package Thermal Metrics application

report.

6.4 Thermal Information

THERMAL METRIC(1)

UNIT

RWB (X2QFN)

12 PINS

RθJA

Junction-to-ambient thermal resistance

169.3

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

68.1

°C/W

RθJB

Junction-to-board thermal resistance

83.4

°C/W

ψJT

Junction-to-top characterization parameter

2.2

°C/W

ψJB

Junction-to-board characterization parameter

83.4

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

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