5.6 Electrical Characteristics - TSD05C

At TA=25

℃ (unless otherwise noted) (1)

PARAMETER

TEST CONDITION

MIN

TYP

MAX

UNIT

VRWM

Reverse stand-off

voltage

IIO <50 nA, across operating temperature range

-5.5

5.5

V

VBR

Break-down

voltage

IIO = 1 mA, IO to GND and GND to IO

7

8

9

V

ILEAK

Reverse leakage

current

VIO = 5.5 V, IO to GND or GND to IO

5

10

nA

VCLAMP

Surge clamping

voltage, tp =

8/20 µs (2)

IPP = 24 A, IO to GND or GND to IO

10.7

13.8

V

IPP = 30 A, IO to GND or GND to IO

11.5

15

V

TLP clamping

voltage, tp = 100

ns

IPP = 16 A, IO to GND or GND to IO

9.3

V

RDYN

Dynamic

resistance (3)

IO to GND

0.15

Ω

GND to IO

CL

Line capacitance VIO = 0 V; ƒ = 1 MHz, IO to GND

4

7

pF

(1)

Typical parameters are measured at 25

℃

(2)

Nonrepetitive current pulse 8 to 20 µs exponentially decaying waveform according to IEC 61000-4-5

(3)

Extraction of RDYN using least squares fit of TLP characteristics between I = 10 A and I = 20 A

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TSD05C, TSD12C, TSD15C, TSD18C, TSD24C, TSD36C

SLVSH42C – JUNE 2023 – REVISED OCTOBER 2024

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