Electronic Components Datasheet Search
  English  ▼

X  

SID1102K Datasheet(PDF) 4 Page - Power Integrations, Inc.

Part # SID1102K
Description  Up to 5 A Single Channel IGBT/MOSFET Gate Driver Providing
PDF  20 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  POWERINT [Power Integrations, Inc.]
Direct Link  http://www.powerint.com
Logo POWERINT - Power Integrations, Inc.

SID1102K Datasheet(HTML) 4 Page - Power Integrations, Inc.

  SID1102K Datasheet HTML 1Page - Power Integrations, Inc. SID1102K Datasheet HTML 2Page - Power Integrations, Inc. SID1102K Datasheet HTML 3Page - Power Integrations, Inc. SID1102K Datasheet HTML 4Page - Power Integrations, Inc. SID1102K Datasheet HTML 5Page - Power Integrations, Inc. SID1102K Datasheet HTML 6Page - Power Integrations, Inc. SID1102K Datasheet HTML 7Page - Power Integrations, Inc. SID1102K Datasheet HTML 8Page - Power Integrations, Inc. SID1102K Datasheet HTML 9Page - Power Integrations, Inc. Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 20 page
background image
Rev. E 09/19
4
SID1102K
www.power.com
Application Example and Components Selection
Without Booster
Figure 5 and Figure 7 show the primary-side and secondary-side
schematic and typical components used for SID1102K design without
a booster stage, in which the primary-side supply voltage (V
VCC) will
be connected between VCC and GND pins and supported through
supply bypass ceramic capacitors C
1 (4.7 µF typically) and C2 (470 nF
typically). If the command signal voltage level is higher than the
rated IN pin voltage, a resistive voltage divider should be used
(Figure 6). Additional capacitor C
F can be used to provide input signal
filtering as shown in Figure 8. The filter time
τ can be calculated
according to equation (1):
τ
RR
RR
CF
12
12
#
#
=
+
(1)
The secondary-side isolated power supply (V
TOT) is connected
between VISO and COM. The positive voltage rail (V
VISO) is supported
through ceramic capacitor C
S1. The negative voltage rail (VVEE) is simi-
larly supported through capacitor C
S2. Typically, CS1 and CS2 should be
at least 3 µF multiplied by the total gate charge of the power
semiconductor switch (Q
GATE) divided by 1 µC. A 10 nF capacitor CGXX
is connected between the G and VGXX pins.
To ensure gate voltage stabilization and collector current limitation
during short-circuit the gate is connected to V
VISO through Schottky
diode D
STO.
To avoid parasitic power-switch-conduction during system power-on
the gate is connected to COM through 22 kΩ resistor R
3 as shown in
Figure 7.
Gate resistors are located physically close to the power semiconduc-
tor switch. As these components can get hot, it is recommended that
they are placed away from the SCALE-iDriver.
Application Example and Components Selection
With Booster
The primary-side can be setup identical as described in the previous
section refering to Figure 5 or Figure 6 or Figure 8.
The secondary-side is slightly extended by the booster MOSFETs T
1
and T
2 (BSO220N03MD G for example) and the addition of discrete
gate resistors R
GON and RGOFF as well as diode D2 (PMEG4010CEJ for
example). All other components can be kept, values might be
adapted to the relevant target power semiconductor switching device,
such as gate resistors and the supply bypass capacitors C
S1, CS2.
In Off-state (VIN = 0 V) the AUXGL pin provides a positive voltage to
the gate terminal of T
2 with reference to the MOSFETs source
potential e.g. COM. T
2 conducts the semiconductors gate terminal to
COM via R
GOFF, providing a negative voltage with reference to VEE to
the semiconductors gate (IGBT in this case). The power semiconduc-
tor device is off.
When VIN changes from 0 V to 5 V, T
2 is turned off by applying 0 V
to the AUXGL pin with reference to COM. At the same time T
1 is
turned on by providing a positive gate voltage via AUXGH to the gate
of T
1 with reference to G. Since the G pin is connected to VTOT in
On-state, the potential of the AUXGH pin needs to be higher than
V
TOT. This is achieved via SCALE-iDriver’s internal charge pump /
bootstrap. When T
1 conducts, it provides a positive gate voltage to
the power semiconductors gate with reference to VEE. The power
semiconductor device is on.
When VIN changes from 5 V to 0 V, it has to be considered, that R
GON
and R
GOFF are paralleled, consequently resulting in a RGOFF < RGON for all
chosen. R
G is placed in series to RGON to allow RGOFF > RGON.
To ensure that no parasitic turn-on of the power semiconductor
switching device occurs when used on the high-side of a half-bridge
topology and under worst case switching conditions, the use of the
Schottky diode D
2 (PMEG4010CEJ for example) is recommended.
Since the current capability of the VGXX pin is limited, it is recom-
mended to restrict the applicable external N-Channel Booster
MOSFETs to those with a gate charge Q
G ≤ 9 nC for T1 and
Q
G ≤ 5 nC for T2.
Figure 8. Optional Input Signal Filtering.
Figure 9. SID1102K with External Boosterstage.
PI-8536-110917
R1
R2
C1
IN
VCC
GND
SCALE-iDriver
CF
C2
SCALE-iDriver
DSTO
D2
T1
T2
PI-8535-110917
VGXX
AUXGH
VISO
G
AUXGL
VEE
COM
VTOT
+
-
CS1
CS2
CGXX
RG
RGON
RGOFF
R3



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com