7

ISO224

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SBAS738A – JUNE 2018 – REVISED OCTOBER 2018

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7.7 Safety-Related Certifications

VDE

UL

Certified according to DIN VDE V 0884-11 (VDE V 0884-11): 2017-01,

DIN EN 60950-1 (VDE 0805 Teil 1): 2014-08,

and DIN EN 60065 (VDE 0860): 2005-11

Recognized under 1577 component recognition and

CSA component acceptance NO 5 programs

Reinforced insulation

Single protection

File number: 40040142

File number: E181974

(1)

The maximum safety temperature, TS, has the same value as the maximum junction temperature, TJ, specified for the device. The IS

and PS parameters represent the safety current and safety power, respectively. Do not exceed the maximum limits of IS and PS. These

limits vary with the ambient temperature, TA.

The junction-to-air thermal resistance, RθJA, in the Thermal Information table is that of a device installed on a high-K test board for

leaded surface-mount packages. Use these equations to calculate the value for each parameter:

TJ = TA + RθJA × P, where P is the power dissipated in the device.

TJ(max) = TS = TA + RθJA × PS, where TJ(max) is the maximum junction temperature.

PS = IS × VDD1max + IS × VDD2max, where VDD1max is the maximum high-side supply voltage and VDD2max is the maximum low-side

supply voltage.

7.8 Safety Limiting Values

Safety limiting intends to minimize potential damage to the isolation barrier upon failure of input or output circuitry.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

IS

Safety input, output, or supply

current

RθJA = 96.3°C/W, TJ = 150°C, TA = 25°C,

VDD1 = 18 V, VDD2 = 5.5 V, see Figure 2

55

mA

RθJA = 96.3°C/W, TJ = 150°C, TA = 25°C,

VDD1 = VDD2 = 5.5 V, see Figure 2

236

PS

Safety input, output, or total

power

RθJA = 96.3°C/W, TJ = 150°C, TA = 25°C,

see Figure 3

1298(1)

mW

TS

Maximum safety temperature

150

°C

(1)

The typical value includes one sigma statistical variation.

7.9 Electrical Characteristics

minimum and maximum specifications apply from TA = –55°C to +125°C, VDD1 = 4.5 V to 18 V, VDD2 = 4.5 V to 5.5 V, VIN =

–12 V to 12 V, and RLOAD = 10 kΩ; typical specifications are at TA = 25°C, and VDD1 = VDD2 = 5 V (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

ANALOG INPUT

VOS

Input offset voltage(1)

Initial, at TA = 25°C, IN = GND1, ISO224B

–5

±1

5

mV

Initial, at TA = 25°C, IN = GND1, ISO224A

–50

±1

50

TCVOS

Input offset voltage drift(1)

ISO224B

–15

±3

15

µV/°C

ISO224A

–60

±12

60

CIN

Input capacitance

IN to GND1

2

pF

RIN

Input resistance

IN to GND1

1

1.25

M

Ω

IIB

Input bias current

IN = GND1

±15

nA

TCIIB

Input bias current drift

IN = GND1

±30

pA/°C

en

Input-referred noise

density

ISO224B

3

µV/

√Hz

ISO224A

4