LM6584

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SNOSA44C – MAY 2003 – REVISED MARCH 2013

5V DC Electrical Characteristics

(1)

Unless otherwise specified, all limits ensured for at TJ = 25°C, VCM = ½VS and RL = 2kΩ. Boldface limits apply at the

temperature extremes.

Symbol

Parameter

Conditions

Min

Typ

Max

Units

(2)

(3)

(2)

VOS

Input Offset Voltage

0.7

4

mV

6

TC VOS

Input Offset Voltage Average

10

μV/°C

Drift

IB

Input Bias Current

−0.3/+0.3

±1

μA

±7

IOS

Input Offset Current

20

150

nA

300

RIN

Input Resistance

Common Mode

20

M

Ω

Differential Mode

0.5

CMRR

Common Mode Rejection Ratio

VCM Stepped from 0 to 5V

72

105

68

dB

VCM Stepped from 0 to 3.5V

75

105

70

PSRR

Power Supply Rejection Ratio

VS = VCC = 3.5V to 5.5V

75

92

dB

70

CMVR

Input Common-Mode Voltage

CMRR > 50dB

0.0

−0.2

V

Range

5.2

5.0

AV

Large Signal Voltage Gain(4)

RL = 2kΩ, VO = 0 to 5V

70

106

dB

65

VO

Output Swing High

RL = 2kΩ

4.85

4.9

V

4.7

Output Swing Low

RL = 2kΩ

0.2

0.15

ISC

Output Short Circuit Current(5)

Sourcing

310

mA

Sinking

400

ICONT

Continuous Output Current(6)

Sourcing

75

mA

Sinking

75

IS

Supply Current (per Amp)

750

1000

μA

1250

(1)

Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very

limited self-heating of the device such that TJ = TA. No specification of parametric performance is indicated in the electrical tables under

conditions of internal self heating where TJ > TA. See applications section for information on temperature de-rating of this device.

(2)

All limits are specified by testing or statistical analysis.

(3)

Typical values represent the most likely parametric norm.

(4)

Large signal voltage gain is the total output swing divided by the input signal required to produce that swing.

(5)

Continuous operation at these output currents will exceed the power dissipation ability of the device

(6)

Power dissipation limits may be exceeded if all four amplifiers source or sink 75mA. Voltage across the output transistors and their

output currents must be taken into account to determine the power dissipation of the device

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