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MUX506IPW.B Datasheet(PDF) 21 Page - Texas Instruments |
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MUX506IPW.B Datasheet(HTML) 21 Page - Texas Instruments |
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21 / 43 page  VDD VDD VSS VSS MUX506 A0 A1 A2 VEN RS VS EN S1 GND CL 1 nF D VOUT VOUT VEN 3 V VOUT QINJ = CL × VOUT Copyright © 2016, Texas Instruments Incorporated 0 V A3 21 MUX506, MUX507 www.ti.com SBAS803A – NOVEMBER 2016 – REVISED NOVEMBER 2017 Product Folder Links: MUX506 MUX507 Submit Documentation Feedback Copyright © 2016–2017, Texas Instruments Incorporated 7.8 Charge Injection The MUX50x have a simple transmission-gate topology. Any mismatch in capacitance between the NMOS and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol QINJ. Figure 32 shows the setup used to measure charge injection. Figure 32. Charge-Injection Measurement Setup |
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