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V1.1

24/09/19

Medium Power Transistor

Newark.com/multicomp-pro

Farnell.com/multicomp-pro

Element14.com/multicomp-pro

Features:

• High performance, low frequency devices typically with current

ratings 2A. Up to 1W power dissipation

• PNP Epitaxial Planar Silicon Transistors

Absolute Maximum Ratings:

(Ta = 25°C unless otherwise specified)

Characteristic

Symbol

Value

Unit

Collector-Emitter Voltage

Ib=0

V

CEO (sus)

60

V

Collector-Emitter Voltage R

BE = 100Ω

V

CER

75

Emitter-Base Voltage

V

EBO

5

Collector Current

Ic

1

A

Collector Peak Current

I

CM

2

Base Current

I

B

0.5

Power Dissipation at Ta = 25°C

at Tc = 25°C

P

tot

1

10

W

Operating Storage Temperature Range

T

J, Tstg

-65 to +200

°C

Thermal Resistance

Junction to Ambient

R

th(j-a)

17.5

°C/W

Junction to Case

R

th(j-c)

Pin Configuration

1. Emitter

2. Base

3. Collector