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ZC930 Datasheet(PDF) 2 Page - Zetex Semiconductors

Part # ZC930
Description  SILICON 12V HYPERABRUPT VARACTOR DIODES
PDF  7 Pages
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Manufacturer  ZETEX [Zetex Semiconductors]
Direct Link  http://www.diodes.com/
Logo ZETEX - Zetex Semiconductors

ZC930 Datasheet(HTML) 2 Page - Zetex Semiconductors

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ZC930, ZMV930 series
ISSUE 10 - JUNE 2007
2
PART
Capacitance
VR=1V
Capacitance
VR=2.5V
Capacitance
VR=4V
Minimum Q
VR=4V
f=50MHz
MIN. pF
MIN. pF
MAX. pF
MAX. pF
930
8.70
4.30
5.50
2.90
200
931
13.50
6.50
7.80
4.00
300
932
17.00
8.50
10.50
5.50
200
933
42.00
18.00
27.00
12.00
150
933A
42.00
20.25
24.75
12.00
150
934
95.00
40.00
65.00
25.00
80
934A
95.00
47.25
57.75
25.00
80
TUNING CHARACTERISTICS at Tamb = 25°C
PARAMETER
SYMBOL
MAX.
UNIT
Reverse voltage
VR
12
V
Forward current
IF
100
mA
Power dissipation at Tamb =25 CSOT23
Ptot
330
mW
Power dissipation at Tamb =25 CSOD323
Ptot
330
mW
Junction temperature
Tj
125
C
Storage temperature range
Tstg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Reverse breakdown voltage
IR =10uA
12
V
Reverse voltage leakage
VR = 8V
0.2
100
nA
Temperature coefficient of capacitance
VR = 3V, f = 1MHz
300
400
ppCm/ C
ELECTRICAL CHARACTERISTICS at Tamb = 25°C



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