2SD2525

2006-11-21

1

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SD2525

Audio Frequency Power Amplifier Applications

• High DC current gain: 100 (min)

• Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2 A, IB = 0.2 A)

• Complementary to 2SB1640

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

60

V

Collector-emitter voltage

VCEO

60

V

Emitter-base voltage

VEBO

7

V

DC

IC

3

Collector current

Pulse

ICP

6

A

Base current

IB

0.5

A

Collector power dissipation

PC

1.8

W

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-10T1A

Weight: 1.5 g (typ.)