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FN4022 Datasheet(PDF) 5 Page - Renesas Technology Corp |
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FN4022 Datasheet(HTML) 5 Page - Renesas Technology Corp |
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5 / 14 page ![]() HIP2100 FN4022 Rev.16.00 Page 5 of 14 Aug 8, 2019 Absolute Maximum Ratings Thermal Information Supply Voltage, VDD, VHB-VHS (Notes 4, 5) . . . . . . . . -0.3V to 18V LI and HI Voltages (Note 5) . . . . . . . . . . . . . . . . -0.3V to VDD +0.3V Voltage on LO (Note 4) . . . . . . . . . . . . . . . . . . . -0.3V to VDD +0.3V Voltage on HO (Note 4) . . . . . . . . . . . . . . . VHS -0.3V to VHB +0.3V Voltage on HS (Continuous) (Note 4) . . . . . . . . . . . . . . -1V to 110V Voltage on HB (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +118V Average Current in VDD to HB diode. . . . . . . . . . . . . . . . . . . 100mA ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 (1kV) Maximum Recommended Operating Conditions Supply Voltage, VDD . . . . . . . . . . . . . . . . . . . . . . . .+9V to 14.0VDC Voltage on HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1V to 100V Voltage on HS. . . . . . . . . . . . . . . .(Repetitive Transient) -5V to 105V Voltage on HB . . . VHS+8V to VHS+14.0V and VDD-1V to VDD+100V HS Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <50V/ns Thermal Resistance (Typical) JA (°C/W) JC (°C/W) SOIC (Note 6) . . . . . . . . . . . . . . . . . . . 95 50 EPSOIC (Note 7) . . . . . . . . . . . . . . . . . 40 3.0 QFN (Note 7) . . . . . . . . . . . . . . . . . . . . 37 6.5 Max Power Dissipation at +25°C in Free Air (SOIC, Note 6) . . . . 1.3W Max Power Dissipation at +25°C in Free Air (EPSOIC, Note 7). . 3.1W Max Power Dissipation at +25°C in Free Air (QFN, Note 7) . . . . . 3.3W Storage Temperature Range . . . . . . . . . . . . . . . . . .-65°C to +150°C Junction Temperature Range. . . . . . . . . . . . . . . . . .-55°C to +150°C Pb-Free Reflow Profile. . . . . . . . . . . . . . . . . . . . . . . . . . . see TB493 CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions can adversely impact product reliability and result in failures not covered by warranty. NOTES: 4. The HIP2100 is capable of derated operation at supply voltages exceeding 14V. Figure 16 on page 9 shows the high-side voltage derating curve for this mode of operation. 5. All voltages referenced to VSS unless otherwise specified. 6. JA is measured with the component mounted on a high-effective thermal conductivity test board in free air. See TB379 for details. 7. JA is measured in free air with the component mounted on a high-effective thermal conductivity test board with “direct attach” features. JC, the “case temp” is measured at the center of the exposed metal pad on the package underside. See TB379 for details. Electrical Specifications VDD = VHB = 12V, VSS = VHS = 0V, No Load on LO or HO, unless otherwise specified. PARAMETERS SYMBOL TEST CONDITIONS TJ = +25°C TJ = -40°C TO +125°C UNIT MIN TYP MAX MIN (Note 8) MAX (Note 8) SUPPLY CURRENTS VDD Quiescent Current IDD LI = HI = 0V - 0.1 0.15 - 0.2 mA VDD Operating Current IDDO f = 500kHz - 1.5 2.5 - 3 mA Total HB Quiescent Current IHB LI = HI = 0V - 0.1 0.15 - 0.2 mA Total HB Operating Current IHBO f = 500kHz - 1.5 2.5 - 3 mA HB to VSS Current, Quiescent IHBS VHS = VHB = 114V - 0.05 1 - 10 µA HB to VSS Current, Operating IHBSO f = 500kHz - 0.7 - - - mA INPUT PINS Low Level Input Voltage Threshold VIL 45.4 - 3 - V High Level Input Voltage Threshold VIH -5.8 7 - 8 V Input Voltage Hysteresis VIHYS -0.4 - - - V Input Pulldown Resistance RI - 200 - 100 500 kΩ UNDERVOLTAGE PROTECTION VDD Rising Threshold VDDR 7 7.3 7.8 6.5 8 V VDD Threshold Hysteresis VDDH -0.5 - - - V HB Rising Threshold VHBR 6.5 6.9 7.5 6 8 V HB Threshold Hysteresis VHBH -0.4 - - - V |
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