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Die Size (Unsawn)

1060 x 1300

41.73 x 51.18

µm

mils

Minimum Bond Pad Size

125 x 125

4.92 x 4.92

µm

mils

Die Thickness

240 (±20)

9.45 (±0.8)

µm

mils

Top Metal Composition

Al-Si-Cu

Back Metal Composition

Si

Voltage Reference – LM285-1.2

Precision Micropower Shunt Voltage Reference in bare die form



±1% (max) output voltage tolerance at 25°C



50ppm/°C average temperature coefficient at 25°C



Wide operating current range 10μA to 20mA



No output capacitor required



Tolerates capacitive load



Bandgap reference corrects temperature drift



Low power drain

Rev 1.0

19/08/25

Features:

Ordering Information

The following part suffixes apply:



No suffix - MIL-STD-883 /2010B Visual Inspection



“H” - MIL-STD-883 /2010B Visual Inspection

+ MIL-PRF-38534 Class H LAT



“K” - MIL-STD-883 /2010A Visual Inspection (Space)

+ MIL-PRF-38534 Class K LAT

LAT = Lot Acceptance Test.

For further information on LAT process flows see below.

www.siliconsupplies.com\quality\bare-die-lot-qualification

Supply Formats:

Mechanical Specification



Default – Die in Waffle Pack (400 per tray capacity)



Sawn Wafer on Tape – On request



Unsawn Wafer – On request



Die Thickness <> 240µm(9 Mils) – On request



In Metal or Ceramic package – On request

The LM285-1.2 is a precision, two-terminal shunt

mode, bandgap voltage reference with fixed reverse

breakdown voltage of 1.235V. The device is ideal for

space-critical high reliability applications with initial 1%

accuracy and 50ppm/°C temperature coefficient. A

10μA to 20mA shunt current capability with low

dynamic impedance ensures stable reverse

breakdown voltage accuracy over a wide current range

and operating temperature. No external stabilizing

capacitors are required.

Description

Die Dimensions in µm (mils)

1060 (41.73)