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HT36 Datasheet(PDF) 3 Page - HOOYI SEMICONDUCTOR

Part # HT36
Description  N-Channel Enhancement Mode MOSFET
PDF  10 Pages
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Manufacturer  HOOYI [HOOYI SEMICONDUCTOR]
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HT36 Datasheet(HTML) 3 Page - HOOYI SEMICONDUCTOR

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HY3610P
HY3610P
3
Electrical Characteristics (Cont.) (T
A = 25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Dynamic Characteristics
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
-
1.3
-
Ω
Ciss
Input Capacitance
-
16200
-
Coss
Output Capacitance
-
996
-
Crss
Reverse Transfer Capacitance
VGS=0V,
VDS=25V,
Frequency=1.0MHz
-
295
-
pF
td(ON)
Turn-on Delay Time
-
25
-
Tr
Turn-on Rise Time
-
td(OFF)
Turn-off Delay Time
-
85
-
Tf
Turn-off Fall Time
VDD=50V, RG= 6
Ω,
IDS =80A, VGS=10V,
-
45
-
ns
Gate Charge Characteristics
Qg
Total Gate Charge
-
201
-
Qgs
Gate-Source Charge
-
49
-
Qgd
Gate-Drain Charge
VDS=80V, VGS=10V,
IDS=80A
-
-
nC
Note * : Pulse test ; pulse width
≤300
µs, duty cycle≤2%.
.
www.hooyi-semi.com



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