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SS8050 Datasheet(PDF) 2 Page - CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO.,LTD.

Part # SS8050
Description  Silicon Epitaxial Planar Transistor
PDF  4 Pages
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Manufacturer  GALAXY-MICRO [CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO.,LTD.]
Direct Link  https://www.gmesemi.com/en/
Logo GALAXY-MICRO - CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO.,LTD.

SS8050 Datasheet(HTML) 2 Page - CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO.,LTD.

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Production specification
Silicon Epitaxial Planar Transistor
SS8050
C086
www.gmicroelec.com
Rev.A
2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
40
V
Collector-emitter breakdown voltage V(BR)CEO
IC=2mA,IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA,IC=0
6
V
Collector cut-off current
ICBO
VCB=35V,IE=0
0.1
μA
Collector cut-off current
ICEO
VCE=20V,IB=0
0.1
μA
Emitter cut-off current
IEBO
VEB=6V,IC=0
0.1
μA
VCE=1V,IC=100mA
120
400
DC current gain
hFE
VCE=1V,IC=800mA
40
110
Collector-emitter saturation voltage
VCE(sat)
IC=800 mA, IB= 80mA
0.28
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=800 mA, IB= 80mA
0.98
1.2
V
Base-emitter voltage
VBE
VCE=1V IC=10mA
0.66
1
V
Output capacitance
Cob
VCB=10V, IE=0
f=1MHz
9.0
pF
Transition frequency
fT
VCE=10V, IC= 50mA
f=30MHz
100
190
MHz
CLASSIFICATION OF hFE(1)
Rank
L
H
J
Range
120-200
200-350
300-400



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