2N3906 datasheet(4/13 Pages) ONSEMI

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2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Note:

4. Pulse test: pulse width

≤ 300 μs, duty cycle ≤ 2.0%.

Symbol

Parameter

Conditions

Min.

Max.

Unit

OFF CHARACTERISTICS

V(BR)CEO

Collector-Emitter Breakdown

Voltage(4)

IC = -1.0 mA, IB = 0

-40

V(BR)CBO

Collector-Base Breakdown Voltage IC = -10 μA, IE = 0

-40

V(BR)EBO

Emitter-Base Breakdown Voltage

IE = -10 μA, IC = 0

-5.0

IBL

Base Cut-Off Current

VCE = -30 V, VBE = 3.0 V

-50

ICEX

Collector Cut-Off Current

VCE = -30 V, VBE = 3.0 V

-50

ON CHARACTERISTICS

hFE

DC Current Gain(4)

IC = -0.1 mA, VCE = -1.0 V

IC = -1.0 mA, VCE = -1.0 V

IC = -10 mA, VCE = -1.0 V

100

300

IC = -50 mA, VCE = -1.0 V

IC = -100 mA, VCE = -1.0V

VCE(sat)

Collector-Emitter Saturation

Voltage

IC = -10 mA, IB = -1.0 mA

-0.25

IC = -50 mA, IB = -5.0 mA

-0.40

VBE(sat)

Base-Emitter Saturation Voltage

IC = -10 mA, IB = -1.0 mA

-0.65

-0.85

IC = -50 mA, IB = -5.0 mA

-0.95

SMALL SIGNAL CHARACTERISTICS

Current Gain - Bandwidth Product

IC = -10 mA, VCE = -20 V,

f = 100 MHz

250

MHz

Cobo

Output Capacitance

VCB = -5.0 V, IE = 0,

f = 100 kHz

4.5

Cibo

Input Capacitance

VEB = -0.5 V, IC = 0,

f = 100 kHz

10.0

Noise Figure

IC = -100 μA, VCE = -5.0 V,

RS = 1.0 kΩ,

f = 10 Hz to 15.7 kHz

4.0

SWITCHING CHARACTERISTICS

Delay Time

VCC = -3.0 V, VBE = -0.5 V

IC = -10 mA, IB1 = -1.0 mA

Rise Time

Storage Time

VCC = -3.0 V, IC = -10 mA,

IB1 = IB2 = -1.0 mA

225

Fall Time

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