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MTSR860F Datasheet(PDF) 2 Page - Shenzhen Luguang Electronic Technology Co., Ltd

Part # MTSR860F
Description  Ultra-Fast Recovery Diodes
PDF  4 Pages
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Manufacturer  LUGUANG [Shenzhen Luguang Electronic Technology Co., Ltd]
Direct Link  http://www.luguang.cn/web_en/index.html
Logo LUGUANG - Shenzhen Luguang Electronic Technology Co., Ltd

MTSR860F Datasheet(HTML) 2 Page - Shenzhen Luguang Electronic Technology Co., Ltd

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■Electrical Characteristics
PARAMETER
SYMBOL
UNIT
TEST CONDITIONS
Min
Typ
Max
Instantaneous forward voltage drop per diode
VFM
V
IFM=8.0A @Tj=25℃
-
1.55
1.7
IFM=8.0A @Tj=150℃
1.15
1.3
DC reverse current at
rated DC blocking voltage per diode
IRRM1
uA
VRM=VRRM
Tj=25℃
-
-
10
IRRM2
VRM=VRRM
Tj=150℃
-
40
200
Reverse Recovery Time
TRR
ns
IF=0.5A IRM=1A IRR=0.25A
Tj=25℃
-
20
25
Peak recovery current
IRRM
A
Tj=25℃
IF=8A
di/dt=-200A/us
VRM=200V
-
3.45
-
Tj=125℃
-
6.25
-
Reverse recovery charge
Qrr
nC
Tj=25℃
-
106.58
-
Tj=125℃
-
283.26
-
■Thermal Characteristics （Ta=25℃ Unless otherwise specified）
PARAMETER
SYMBOL
UNIT
MT
SR860F
Thermal Resistance
Between junction and case
RθJ-C
℃
/W
4.0
Between junction and Air
RθJ-A
℃
/W
50
■Ordering Information (Example)
PREFERED P/N
UNIT WEIGHT(g)
MINIIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY MODE
MT
SR860F
Approximate 1.6
50
1000
5000
Tube
■Characteristics (Typical)
1
2
5
10
20
50
100
60
80
100
120
8.3ms Single
Half Sine-Wave
JEDEC Method
140
40
FIG2:Surge Forward Current Capability
Number of Cycles
20
Case Temperature（℃）
FIG1:Io -Tc Curve
0
1.0
50
100
150
2.0
3.0
4.0
5.0
6.0
7.0
8.0
200
TC measure point
http://www.lgesemi.com
Revision:20240607-P
2
mail:lge@lgesemi.com
MTSR860F
Ultra-Fast Recovery Diodes  



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