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BAS19 Datasheet(PDF) 3 Page - ON Semiconductor |
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BAS19 Datasheet(HTML) 3 Page - ON Semiconductor |
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3 / 8 page ![]() © 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com BAS19 Rev. 1.1 2 Thermal Characteristics Values are at TA = 25°C unless otherwise noted. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit PD Power Dissipation 350 mW RθJA Thermal Resistance, Junction-to-Ambient 357 °C/W Symbol Parameter Conditions Min. Max. Unit VR Breakdown Voltage IR = 100 μA120 V VF Forward Voltage IF = 100 mA 1.00 V IF = 200 mA 1.25 IR Reverse Current VR = 100 V 0.1 μA VR = 100 V, TA = 150°C 100 CT Total Capacitance VR = 0, f = 1.0 MHz 5.0 pF trr Reverse Recovery Time IF = IR = 30 mA, IRR = 3.0 mA, RL = 100 Ω 50 ns |
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