© 2007 Fairchild Semiconductor Corporation

www.fairchildsemi.com

BAX16 Rev. 1.0.0

1

April 2008

BAX16

High Voltage General Purpose Diode

Absolute Maximum Ratings * T

a = 25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of the diode may be impaired.

Notes:

1) These ratings are based on a maximum junction temperature of 200degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics * T

a = 25°C unless otherwise noted

Symbol

Parameter

Value

Unit

VRRM

Maximum Repetitive Reverse Voltage

150

V

IF(AV)

Average Rectified Forward Current

200

mA

if

Recurrent Peak Forward Current

600

mA

IFSM

Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 s

Pulse Width = 1.0

ms

1

4

A

A

TSTG

Storage Temperature Range

-65 to 200

°C

TJ

Operating Junction Temperature

175

°C

Symbol

Parameter

Conditions

Min.

Max.

Units

VR

Breakdown Voltage

IR = 100mA

180

V

VF

Forward Voltage

IF = 1.0mA

0.65

V

VFP

Forward Voltage

Pulse Width = 300

ms

IF = 100mA

IF = 200mA

1.3

1.5

IR

Reverse Leakage

VR = 50V

VR = 50V, TA = 150°C

VR = 150V

VR = 150V, TA = 150°C

25

25

100

100

nA

mA

nA

mA

trr

Reverse Recovery Time

IF = 30mA, IR = 30mA,

Irr = 1.0mA, RL = 100W

120

ns

DO-35 Glass case

COLOR BAND DENOTES CATHODE