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BUL118 Datasheet(PDF) 1 Page - STMicroelectronics |
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BUL118 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 7 page ![]() BUL118 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s NPN TRANSISTOR s HIGH VOLTAGE CAPABILITY s LOW SPREAD OF DYNAMIC PARAMETERS s MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION s VERY HIGH SWITCHING SPEED APPLICATIONS: s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. ® INTERNAL SCHEMATIC DIAGRAM May 1999 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Val ue Uni t VCES Collector-Emit ter Volt age (VBE = 0) 700 V VCEO Collector-Emit ter Volt age (IB = 0) 400 V VEBO Emitt er-Base Voltage (IC =0, IB <1.5A, tp <10 µs, Tj < 150oC) BVEBO V IC Collector Current 3 A ICM Collector Peak Current (tp <5 ms) 6 A IB Base Current 1.5 A IBM Base Peak Current (tp <5 ms) 3 A Ptot Tot al Dissipation at Tc =25 oC60 W Tstg St orage Temperature -65 to 150 oC 1 2 3 TO-220 1/7 |
Similar Part No. - BUL118 |
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Similar Description - BUL118 |
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