STP13NM50N datasheet(3/17 Pages) STMICROELECTRONICS

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STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N

Electrical ratings

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Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220/TO-247

D²PAK/I²PAK

TO-220FP

VDS

Drain-source voltage (VGS=0)

500

VGS

Gate-source voltage

± 25

Drain current (continuous) at TC = 25°C

12 (1)

Limited only by maximum temperature allowed

Drain current (continuous) at TC = 100°C

6 (1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

48 (1)

PTOT

Total dissipation at TC = 25°C

100

dv/dt (3)

ISD ≤12A, di/dt ≤400A/µs, VDD =80% V(BR)DSS

Peak diode recovery voltage slope

V/ns

VISO

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t=1s;TC=25°C)

2500

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 2.

Thermal data

Symbol

Parameter

Value

Unit

TO-220/TO-247

D²PAK/I²PAK

TO-220FP

Rthj-case

Thermal resistance junction-case max

1.25

°C/W

Rthj-amb

Thermal resistance junction-amb max

62.5

°C/W

Maximum lead temperature for soldering

purpose

300

°C

Table 3.

Avalanche characteristics

Symbol

Parameter

Max value

Unit

IAS

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

3.5

EAS

Single pulse avalanche energy

(starting Tj=25°C, ID=IAS, VDD= 50V)

200

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