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BUL416 Datasheet(PDF) 1 Page - STMicroelectronics |
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BUL416 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 6 page ![]() BUL416 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s NPN TRANSISTOR s HIGH VOLTAGE CAPABILITY s VERY HIGH SWITCHING SPEED s FULLY CHARACTERISED AT 125 oC s LOW SPREAD OF DYNAMIC PARAMETERS APPLICATIONS s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s SWITCH MODE POWER SUPPLIES DESCRIPTION The BUL416 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. INTERNAL SCHEMATIC DIAGRAM September 1997 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Val ue Uni t VCES Collect or-Emitt er Voltage (VBE = 0) 1600 V VCEO Collect or-Emitt er Voltage (IB = 0) 800 V VEBO Emitt er-Base Voltage (IC =0) 9 V IC Collect or Current 6 A ICM Collect or Peak Current (tp <5 ms) 9 A IB Base Current 5 A IBM Base Peak Current (tp <5 ms) 8 A Ptot Total Dissipation at Tc =25 oC 110 W Tstg St orage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC 1 2 3 TO-220 1/6 |
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