CSD18503KCS 40V N-Channel NexFET™ Power MOSFET

1 Features

• Ultra low Qg and Qgd

• Low thermal resistance

• Avalanche rated

• Logic level

• Pb free terminal plating

• RoHS compliant

• Halogen free

• TO-220 plastic package

2 Applications

• DC-DC Conversion

• Secondary Side Synchronous Rectifier

• Motor Control

3 Description

This 40V, 3.6mΩ, TO-220 NexFET™ power MOSFET

has been designed to minimize losses in power

conversion applications.

Gate

(Pin 1)

Drain (Pin 2)

Source (Pin 3)

Product Summary

TA = 25°C

TYPICAL VALUE

UNIT

VDS

Drain-to-Source Voltage

40

V

Qg

Gate Charge Total (10V)

30

nC

Qgd

Gate Charge Gate-to-Drain

4.6

nC

RDS(on)

Drain-to-Source On-Resistance

VGS = 4.5V

5.4

mΩ

VGS = 10V

3.6

mΩ

VGS(th)

Threshold Voltage

1.9

V

Ordering Information (1)

Device

Package

Media

Qty

Ship

CSD18503KCS

TO-220 Plastic Package

Tube

50

Tube

(1)

For all available packages, see the orderable addendum at

the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C

VALUE

UNIT

VDS

Drain-to-Source Voltage

40

V

VGS

Gate-to-Source Voltage

±20

V

ID

Continuous Drain Current (Package limited)

100

A

Continuous Drain Current (Silicon limited),

TC = 25°C

142

Continuous Drain Current (Silicon limited),

TC = 100°C

100

IDM

Pulsed Drain Current (1)

358

A

PD

Power Dissipation

188

W

TJ,

Tstg

Operating Junction and

Storage Temperature Range

–55 to 175

°C

EAS

Avalanche Energy, single pulse

ID = 57A, L = 0.1mH, RG = 25Ω

162

mJ

(1)

Max RθJC = 0.8°C/W, pulse duration ≤100μs, duty cycle ≤1%

0

2

4

6

8

10

12

14

16

0

2

4

6

8

10

12

14

16

18

20

VGS - Gate-to- Source Voltage (V)

TC = 25°C Id = 75A

TC = 125ºC Id = 75A

G001

RDS(on) vs VGS

0

2

4

6

8

10

0

5

10

15

20

25

30

Qg - Gate Charge (nC)

ID = 75A

VDS = 20V

G001

Gate Charge

CSD18503KCS

SLPS368B – SEPTEMBER 2012 – REVISED MARCH 2024

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.