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CSD18534KCS Datasheet(PDF) 3 Page - Texas Instruments

Part # CSD18534KCS
Description  CSD18534KCS 60V N-Channel NexFET™ Power MOSFET
PDF  14 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

CSD18534KCS Datasheet(HTML) 3 Page - Texas Instruments

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4 Specifications
4.1 Electrical Characteristics
TA = 25°C unless otherwise stated
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-Source Voltage
VGS = 0V, ID = 250μA
60
V
IDSS
Drain-to-Source Leakage Current
VGS = 0V, VDS = 48V
1
μA
IGSS
Gate-to-Source Leakage Current
VDS = 0V, VGS = 20V
100
nA
VGS(th)
Gate-to-Source Threshold Voltage
VDS = VGS, ID = 250μA
1.5
1.9
2.3
V
RDS(on)
Drain-to-Source On-Resistance
VGS = 4.5V, ID = 40A
10.2
13.3
mΩ
VGS = 10V, ID = 40A
7.6
9.5
mΩ
gƒs
Transconductance
VDS = 30V, ID = 40A
100
S
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
VGS = 0V, VDS = 30V, f = 1MHz
1500
1880
pF
Coss
Output Capacitance
164
205
pF
Crss
Reverse Transfer Capacitance
5.0
6.5
pF
RG
Series Gate Resistance
1.5
3.0
Qg
Gate Charge Total (4.5V)
VDS = 30V, ID = 40A
9.3
12
nC
Qg
Gate Charge Total (10V)
19
24
nC
Qgd
Gate Charge Gate-to-Drain
3.1
nC
Qgs
Gate Charge Gate-to-Source
4.8
nC
Qg(th)
Gate Charge at Vth
3.3
nC
Qoss
Output Charge
VDS = 30V, VGS = 0V
18
nC
td(on)
Turn On Delay Time
VDS = 30V, VGS = 10V,
IDS = 40A, RG = 0Ω
4.2
ns
tr
Rise Time
4.8
ns
td(off)
Turn Off Delay Time
10.4
ns
Fall Time
2.4
ns
DIODE CHARACTERISTICS
VSD
Diode Forward Voltage
ISD = 40A, VGS = 0V
0.8
1
V
Qrr
Reverse Recovery Charge
VDS= 30V, IF = 40A,
di/dt = 300A/μs
68
nC
trr
Reverse Recovery Time
49
ns
4.2 Thermal Information
TA = 25°C unless otherwise stated
THERMAL METRIC
MIN
TYP
MAX
UNIT
RθJC
Junction-to-Case Thermal Resistance
1.3
°C/W
RθJA
Junction-to-Ambient Thermal Resistance
62
www.ti.com
CSD18534KCS
SLPS383C – SEPTEMBER 2012 – REVISED MARCH 2024
Copyright © 2024 Texas Instruments Incorporated
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