FLLD261

HIGH CONDUCTANCE LOW LEAKAGE DIODE

P8A

PD . . . .350 mW @ TA = 25 Deg C

BV . . . .200 V (MIN) @ IR = 5 uA

ABSOLUTE MAXIMUM RATINGS (NOTE 1)

TEMPERATURES

Storage Temperature

-55 to +150 Degrees C

Operating Junction Temperature

-55 to +150 Degrees C

POWER DISSIPATION (NOTES 2 & 3)

Total Device Dissipation at TA = 25 Deg C

350 mW

Derating Factor per Degree C

2.8 mW

VOLTAGES & CURRENTS

WIV

Working Inverse Voltage

100 V

IO

Average Rectified Current

250 mA

IF

DC Forward Current

600 mA

if

Recurrent Peak Forward Current

700 mA

if (surge) Peak Forward Surge Current

Pulse width = 1 second

1.0 A

Pulse width = 1 microsec

3.0 A

PACKAGE

TO-236AB (Low)

3

1

2

NOTES:

1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

SYM

CHARACTERISTICS

MIN

MAX

UNITS

TEST CONDITIONS

BV

Breakdown Voltage

200

V

IR =

5.0 uA

IR

Reverse Voltage Leakage Current

5.0

nA

VR = 100 V

5.0

uA

VR = 100 V

TA = 150 Deg C

VF

Forward Voltage

1.40

V

IF =

200 mA

CT

Diode Capacitance

4.0

pF

VR =

1.0 V

f = 1.0 MHZ

TRR

Reverse Recovery Time

400

ns

IF = IR = 50 to 400 mA

IRR = 10% IR

RL = 100 ohms

TFR

Forward Recovery Time

10

ns

IF =

10 mA

VFM

Peak Forward Voltage

0.9

V

IF =

10 mA

Typ

Rise Time = 5 ns +/-20%

ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated)

3

2

1

CONNECTION DIAGRAMS