BUL903 datasheet(2/6 Pages) STMICROELECTRONICS

2 / 6 page

THERMAL DATA

Rthj-ca se

Rthj- amb

Thermal Resistance Junction-Case

Max

Thermal Resistance Junction-Ambient

Max

1. 8

62. 5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICES

Collect or Cut-off

Current (VBE =0)

VCE =900 V

IEBO

Base-Emitt er Leakage

Current

VEB =7 V

100

µA

VCEO(sus)

Collect or-Emitter

Sustaining Voltage

(IB =0)

IC =10 mA

L =25 mH

400

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =1 A

IB =0.15 A

1.0

VBE(s at)

∗ Base-Emitter

Saturat ion Voltage

IC =0.1 A

IB =0.05 A

IC =0. 5 A

IB =0.1 A

IC =2.0 A

IB =0.4 A

1.0

1.1

1.2

hFE

∗

DC Current G ain

IC =5 mA

VCE =10 V

IC =0. 5 A

VCE =3 V

Parallel Diode Forward

Voltage

IF =3 A

1.2

RESI STIVE LO AD

Delay Time

Rise Time

St orage Time

Fall T ime

VCC =125 V

IC =0.7 A

IB1 =0.05 A

IB2 =0.4 A

tp =300

µs

0.2

1.0

0.8

0.25

µs

RESI STIVE LO AD

Delay Time

Rise Time

St orage Time

Fall T ime

VCC =125 V

IC =0.5 A

IB1 = 0.045 A

IB2 =0.5 A

tp =300

µs

0.2

0.5

0.8

0.5

µs

TRR

Diode Reverse

Recovery Time

IF =1 A

di/dt =100 A/

µs

VDD =30 V

300

Esb

Avalanche Energy

L = 2 mH

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

BUL903ED

2/6

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