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2SC6026 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SC6026 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 3 page  2SC6026 2005-03-23 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026 General-Purpose Amplifier Applications • High voltage and high current : VCEO = 50 V, IC = 100 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 • Complementary to 2SA2154 • Lead (Pb) free Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Base current IB 30 mA Collector power dissipation PC 50 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55~150 °C Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Collector cutoff current ICBO VCB = 60 V, IE = 0 ⎯ ⎯ 0.1 µA Emitter cutoff current IEBO VEB = 5 V, IC = 0 ⎯ ⎯ 0.1 µA DC current gain hFE (Note) VCE = 6 V, IC = 2 mA 120 ⎯ 400 ⎯ Collector-emitter saturation voltage VCE (sat) IC = 100 mA, IB = 10 mA ⎯ 0.1 0.25 V Transition frequency fT VCE = 10 V, IC = 1 mA 60 ⎯ ⎯ MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ⎯ 0.95 ⎯ pF Note: hFE classification Y (F): 120~240, GR (H): 200~400 ( ) marking symbol Marking Unit: mm JEDEC ― JEITA ― TOSHIBA 2-1E1A Weight: 0.0006 g (typ.) fSM 1.BASE 2.EMITTER 3.COLLECTOR 0.1±0.05 3 0.8±0.05 1.0±0.05 1 2 0.1±0.05 Type Name hFE Rank 7F |
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