5.6 Electrical Characteristics

Part Number

VRWM

VBR (V) at IT

V Clamp

(1) (2)

VC (V) at IPP

Reverse

Leakage

Current

IR (nA) at

VRWM

Temperature

Coefficient

SZ (mV/C) at IT

Capacitance

CD (pF)

Volts

MIN

TYP

MAX

IT (mA)

MAX

IPP (A)

MAX

TYP

IT (mA)

MAX

MMBZ15VAL

12

14.3

15

15.8

1

20

1.7

50

11

1

105

MMBZ27VAL

22

25.65

27

28.35

1

39

0.9

50

23

1

73

(1)

Device stressed with 10/1000μs exponential decay waveform according to IEC 61643-321

(2)

Measured from pin 1 or pin 2 to pin 3

5.7 Typical Characteristics

Te mperature (

C)

-75

-50

-25

0

25

50

75

100

125

150

0

5

10

15

20

25

MMBZ15VAL

MMBZ27VAL

Figure 5-1. Leakage Current vs Temperature

Te mperature (

C)

-75

-50

-25

0

25

50

75

100

125

150

10

15

20

25

30

35

MMBZ15VAL

MMBZ27VAL

Figure 5-2. Breakdown Voltage vs Temperature

Ambient Te mperature (

C)

0

25

50

75

100

125

150

175

0

20

40

60

80

100

120

Figure 5-3. Peak Pulse Power Derating Curve

www.ti.com

MMBZ15VAL, MMBZ27VAL

SLVSJ23 – JUNE 2025

Copyright © 2025 Texas Instruments Incorporated

Submit Document Feedback

5