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BUX98 Datasheet(PDF) 1 Page - STMicroelectronics |
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BUX98 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 4 page ![]() BUX98 BUX98A HIGH POWER NPN SILICON TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPES s NPN TRANSISTOR s HIGH VOLTAGE CAPABILITY s HIGH CURRENT CAPABILITY s FAST SWITCHING SPEED APPLICATIONS s HIGH FREQUENCY AND EFFICENCY CONVERTERS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BUX98 and BUX98A are silicon multiepitaxial mesa NPN transistor in jedec TO-3 metal case, intended and industrial applications from single and three-phase mains operation. INTERNAL SCHEMATIC DIAGRAM July 1997 1 2 TO-3 (version R) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BUX98 BUX98A VCER Collector-Emitter Voltage (RBE = ≤ 10 Ω) 850 1000 V VCES Collector-Base Voltage (VBE = 0) 850 1000 V VCEO Collector-Emitter Voltage (IB = 0) 400 450 V VEBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 30 A ICM Collector Peak Current (tp < 5 ms) 60 A ICP Collector Peak Current non Rep. (tp < 20 µs) 80 A IB Base Current 8 A IBM Base Peak Current (tp < 5 ms) 30 A Ptot Total Power Dissipation at Tcase < 25 oC 250 W Tstg Storage Temperature -65 to 200 oC Tj Max Operating Junction Temperature 200 oC 1/4 |
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