BUZ11 datasheet(1/8 Pages) STMICROELECTRONICS

Part #	BUZ11

Description	N - CHANNEL 50V - 0.03W - 33A TO-220 STripFET] MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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BUZ11

N - CHANNEL 50V - 0.03

Ω - 33A TO-220

STripFET

™ MOSFET

s

TYPICAL RDS(on) = 0.03

Ω

s

AVALANCHE RUGGED TECHNOLOGY

s

100% AVALANCHE TESTED

s

HIGH CURRENT CAPABILITY

s

175

oC OPERATING TEMPERATURE

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SOLENOID AND RELAY DRIVERS

s

REGULATORS

s

DC-DC & DC-AC CONVERTERS

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

®

INTERNAL SCHEMATIC DIAGRAM

July 1999

1

2

3

TO-220

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

VDS

Drain-source Voltage (VGS =0)

50

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)50

V

VGS

G ate-source Volt age

± 20

V

ID

Drain Current (continuous) at Tc =25

oC33

A

IDM

Drain Current (pulsed)

134

A

Ptot

T otal Dissipat ion at Tc =25

oC90

W

Tstg

Storage Temperature

-65 to 175

o C

Tj

Max. Operating Junction Temperature

175

o C

DIN HUMIDI TY CAT EGORY (DI N 40040)

E

I EC CLIMAT IC CAT EG ORY (DI N IEC 68-1)

55/ 150/56

First digit of the datecode being Z or K identifies silicon characterized in this datasheet.

T YPE

VDSS

RDS(o n)

ID

BUZ 11

50 V

< 0.04

Ω

33 A

1/8

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