MJE271 datasheet(1/2 Pages) ISC

Part #	MJE271

Description	Silicon PNP Power Transistor

PDF	2 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Silicon PNP Power Transistor

MJE271

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= -100V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat): -2.0V(Max) @IC= -20mA

APPLICATIONS

· Switching Regulators

· Converters

· Power Amplifiers

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-100

V

VCEO

Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-2

A

ICM

Peak Collector Current

-4

A

PD

Total Power Dissipation

@ TC=25℃

15

W

TJ

Max. Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

8.33

℃

/W

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MJE271 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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