BYT231PIV-1000 datasheet(2/5 Pages) STMICROELECTRONICS

2 / 5 page

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF *

Forward voltage drop

Tj = 25

°CIF =30 A

1.9

Tj = 100

°C

1.8

IR **

Reverse leakage

current

Tj = 25

°CVR =VRRM

100

µA

Tj = 100

°C

5mA

Pulse test : * tp = 380

µs, δ <2%

** tp = 5 ms,

δ <2%

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

Per diode

Total

1.5

0.8

°C/W

Rth(c)

Coupling

0.1

When the diodes 1 and 2 are used simultaneously :

∆ Tj(diode 1) = P(diode) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c)

THERMAL RESISTANCES

To evaluate the conduction losses use the following equation:

P = 1.47 x IF(AV) + 0.010 IF

(RMS)

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

trr

Tj=25

°CIF =1A VR = 30V dIF/dt = - 15A/µs

165

IF = 0.5A IR =1A Irr = 0.25A

RECOVERY CHARACTERISTICS (per diode)

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

tIRM

Ma xi mu m rev er se

r eco ve ry tim e

dIF/dt = - 120 A/

µsVCC = 200 V

IF =30 A

≤ 0.05 µH

Tj = 100

°C

(see fig. 11)

200

dIF/dt = - 240 A/

µs

120

IRM

Ma xi mu m rev er se

r eco ve ry cur r ent

dIF/dt = - 120 A/

µs

19.5

dIF/dt = - 240 A/

µs

VRP

VCC

Turn-off overvoltage

coefficient

Tj = 100

°CVCC = 200V

IF =IF(AV)

dIF/dt = - 30A/

µsLp =5µH

(see fig. 12)

4.5

TURN-OFF SWITCHING CHARACTERISTICS (per diode)

BYT230PIV-1000 / BYT231PIV-1000

2/5

BYT231PIV-1000 Datasheet(PDF) 2 Page - STMicroelectronics

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