1

Power Transistors

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Base current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

Ratings

500

500

400

7

20

10

5

45

2

150

–55 to +150

Unit

V

V

V

V

A

A

A

W

˚C

˚C

Ta=25

°C

2SC3871

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

q

High-speed switching

q

q

Wide area of safe operation (ASO)

q

Full-pack package which can be installed to the heat sink with

one screw

Parameter

Collector cutoff current

Emitter cutoff current

Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

Symbol

Conditions

min

400

15

8

typ

25

max

100

100

1

1.5

0.7

2

0.3

Unit

µA

µA

V

V

V

MHz

µs

µs

µs

Unit: mm

1:Base

2:Collector

3:Emitter

TO–220 Full Pack Package(a)

10.0

±0.2

5.5

±0.2

0.5

+0.2

–0.1

1.4

±0.1

1.3

±0.2

0.8

±0.1

2.54

±0.25

5.08

±0.5

2

13

2.7

±0.2

4.2

±0.2

φ3.1±0.1