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STD60NF3LL Datasheet(PDF) 5 Page - Texas Instruments |
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STD60NF3LL Datasheet(HTML) 5 Page - Texas Instruments |
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5 / 13 page  STD60NF3LL Electrical characteristics 5/13 Table 5. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current Source-drain current (pulsed) 60 240 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Forward on voltage ISD = 60A, VGS = 0 1.2 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 60A, di/dt = 100A/µs, VDD = 15V, Tj = 150°C (see Figure 14) 65 105 3.4 ns nC A |
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