© 2004 Fairchild Semiconductor Corporation

www.fairchildsemi.com

BAV103 Rev. 1.1.0

1

April 2013

BAV103

High Voltage, General Purpose Diode

Absolute Maximum Ratings(1)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Note:

1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics

Symbol

Parameter

Value

Units

WIV

Working Inverse Voltage

200

V

IO

Average Rectified Current

200

mA

IF

DC Forward Current

500

mA

if

Recurrent Peak Forward Current

600

mA

IFSM

Non-repetitive Peak Forward Current

Pulse Width = 1.0 s

1.0

A

Pulse Width = 1.0

μs4.0

A

TSTG

Storage Temperature Range

-65 to +200

°C

TJ

Operating Junction Temperature

-65 to +200

°C

Symbol

Parameter

Value

Units

PD

Power Dissipation

500

mW

Linear Derating Factor from TA = 25°C3.33

mW/

°C

RθJA

Thermal Resistance, Junction to Ambient

350

°C/W

SOD80

Cathode Band

Description

A general purpose diode that couples high forward con-

ductance fast swiching speed and high blocking volt-

ages in a glass leadless LL-34 surface mount package.

Placement of the expansion gap has no relationship to

the location of the cathode terminal which is indicated by

the first color band.