INA282, INA283, INA284, INA285, INA286

SBOS485C – NOVEMBER 2009 – REVISED MAY 2015

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6 Specifications

6.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Supply voltage, V+

18

V

Differential (V+IN) – (V–IN)

(3)

–5

+5

V

Analog inputs, V+IN, V–IN

(2)

Common-mode

–14

+80

V

REF1, REF2, OUT

GND – 0.3

(V+) + 0.3

V

Input current into any pin

5

mA

Junction temperature

150

°C

Storage temperature range, Tstg

–65

+150

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

V+IN and V–IN are the voltages at the +IN and –IN pins, respectively.

(3)

Input voltages must not exceed common-mode rating.

6.2 ESD Ratings

VALUE

UNIT

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

V(ESD)

Electrostatic discharge

V

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±1000

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VCM

Common-mode input voltage

12

V

V+

Operating supply voltage

5

V

TA

Operating free-air temperature

–40

+125

°C

6.4 Thermal Information

INA28x

THERMAL METRIC(1)

D (SOIC)

DGK (VSSOP)

UNIT

8 PINS

8 PINS

RθJA

Junction-to-ambient thermal resistance

134.9

164.1

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

72.9

56.4

°C/W

RθJB

Junction-to-board thermal resistance

61.3

85.0

°C/W

ψJT

Junction-to-top characterization parameter

18.9

6.5

°C/W

ψJB

Junction-to-board characterization parameter

54.3

83.3

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

n/a

n/a

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

4

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