6.4.5 Improving Transient Robustness

CAUTION

Applications involving large input transients with excessive dV/dt above 2 kV per microsecond

present at the device input pins can cause damage to the internal ESD structures on version A

devices.

The potential damage from large input transients is a result of the internal latching of the ESD structure

to ground when this transient occurs at the input. With significant current available in most current-sensing

applications, the large current flowing through the input transient-triggered, ground-shorted ESD structure quickly

results in damage to the silicon. External filtering can be used to attenuate the transient signal prior to reaching

the inputs to avoid the latching condition. Care must be taken to ensure that external series input resistance

does not significantly impact gain error accuracy. For accuracy purposes, keep these resistances under 10 Ω

if possible. Ferrite beads are recommended for this filter because of the inherently low-dc ohmic value. Ferrite

beads with less than 10 Ω of resistance at dc and over 600 Ω of resistance at 100 MHz to 200 MHz are

recommended. The recommended capacitor values for this filter are between 0.01 µF and 0.1 µF to ensure

adequate attenuation in the high-frequency region. Figure 6-7 illustrates this protection scheme.

OUT

IN+

IN-

-

REF

GND

V+

1 MW

1 MW

R3

R4

2.7 V to 26 V

Reference

Voltage

Shunt

Load

Supply

Output

0.01 F

to 0.1 F

m

m

MMZ1608B601C

0.01 F

to 0.1 F

m

m

Device

Copyright © 2017, Texas Instruments Incorporated

Figure 6-7. Transient Protection

To minimize the cost of adding these external components to protect the device in applications where large

transient signals may be present, version B and C devices are now available with new ESD structures that

are not susceptible to this latching condition. Version B and C devices are incapable of sustaining these

damage-causing latched conditions so they do not have the same sensitivity to the transients that the version A

devices have, thus making the version B and C devices a better fit for these applications.

INA210-Q1, INA211-Q1, INA212-Q1, INA213-Q1, INA214-Q1, INA215-Q1

SBOS475K – MARCH 2009 – REVISED NOVEMBER 2023

www.ti.com

18

Submit Document Feedback

Copyright © 2023 Texas Instruments Incorporated

Product Folder Links: INA210-Q1 INA211-Q1 INA212-Q1 INA213-Q1 INA214-Q1 INA215-Q1