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EF9345 Datasheet(PDF) 12 Page - STMicroelectronics

Part # EF9345
Description  HMOS2 SINGLE CHIP SEMI-GRAPHIC DISPLAY PROCESSOR
PDF  38 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

EF9345 Datasheet(HTML) 12 Page - STMicroelectronics

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Data Structure in Memory
A page is a data structure displayable on the
screen up to 25 rows of characters. According to
the character code format, each row on the screen
is associated with 2 (or 3) 40-byte buffers. This set
of 2 (or 3) buffers constitutes a row buffer (Fig-
ure 8). The buffers belonging to a row buffer must
meet the following requirements :
- They have the same Y address,
- They have the same district number,
- They lie at 2 (or 3) successive (modulo 4) block
addresses in their common district.
Consequently, a row buffer is defined by its first
buffer address and its format.
A page is a set of successive row buffers :
- With the same format,
- With the same district number,
- With the same block address of first buffer. This
block address must be even,
- Lying at successive (modulo 24) Y addresses.
Consequently, a page should not cross a district
boundary. General purpose memory area may be
used but should respect the buffer of row buffer
structure. See Figure 9 for pointer incrementation
implied by these data structures.
Memory Time Sharing (See Figure 10)
The memory interface provides a 500 ns cycle time.
That is to say a 2 Mbyte/s memory bandwith. This
bandwith is shared between :
- Reading a row buffer from memory to load the
internal row buffer (up to 120 bytes once each row),
- Reading user defined characters slices from me-
mory (1 byte each
µs),
- Indirect microprocessor read or write operation,
- Refresh cycles to allow DRAM use, with no over-
head.
A fixed allocation scheme implements the sharing.
During these lines, no microprocessor access is
provided for 104
µs ; this hold too when no user
defined character slices are addressed.
DUM
UDS
UDS
UDS
µP
LD
LD
µP
1
µs
LD
RFSH
µP
LD
µP
1
µs
40
µs24µs
40
µs24µs
312/362
SCAN
LINES
250/210
ACTIVE
SCAN
LINES
INACTIVE LINE
LAST ROW LINE
FIRST ROW LINE
OTHER ROW LINE
ACTIVE
DISPLAY
TIME
ONE ROW = 10 SCAN LINES
MEMORY CYCLE
DUM : dummy cycle
µP : indirect access to memory
RFSH : refresh cycle
UDS : slice read cycle
LD : read cycle to load the internal row buffer
µP
RFSH
RFSH
Figure 10 : Memory Cycle Allocation
3210
4321
0
43210
DB
Z (0 to 15)
Y (0, 1 ; 8 to 31)
X (0 to 39)
13
12
11
10
9876
543
210
TRANSCODING
LOGICAL
ADDRESS
PHYSICAL
ADDRESS
5
Figure 11 : Logical to Physical Address Transcoding Performed On-chip
Notes : 1.
Dummy cycles are read cycles at dummy addresses.
2.
RFSH cycles are read cycles performed by an 8-bit auto-incrementing counter. Low order address byte ADM(0:7) cycles
through its 256 states in less than 1ms.
3.
The microprocessor may indirectly access the memory once every
µs, except during the first and the last line of a row, when
the internal buffer must be reloaded.
EF9345
12/38



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