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STPS5L25 Datasheet(PDF) 2 Page - STMicroelectronics |
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STPS5L25 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 8 page ![]() Characteristics STPS5L25 2/8 DocID3626 Rev 8 1 Characteristics To evaluate the conduction losses use the following equation: P = 0.2 x IF(AV) + 0.03 x IF 2 (RMS) Table 2. Absolute ratings (limiting values, at 25 °C unless otherwise stated) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 25 V IF(RMS) Forward rms current 7 A IF(AV) Average forward current, δ 0.5 square wave T c = 140 °C, 5 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 75 A PARM Repetitive peak avalanche power tp = 10 s, Tj = 125 °C 215 W Tstg Storage temperature range -65 to +150 °C Tj Maximum operating junction temperature(1) 1. condition to avoid thermal runaway for a diode on its own heatsink 150 °C Table 3. Thermal resistance Symbol Parameter Max. value Unit Rth(j-c) Junction to case 2.5 °C/W Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) 1. Pulse test: tp = 380 µs, < 2% Reverse leakage current Tj = 25 °C VR = VRRM -- 350 A Tj = 125 °C - 55 115 mA VF (1) Forward voltage drop Tj = 25 °C IF = 5 A -- 0.47 V Tj = 125 °C - 0.31 0.35 Tj = 25 °C IF = 10 A -- 0.59 Tj = 125 °C - 0.41 0.50 dPtot dTj < 1 Rth(j-a) |
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