STPS30M60 datasheet(3/8 Pages) STMICROELECTRONICS

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STPS30M60

Characteristics

Figure 2. Average forward power dissipation

versus average forward current

Figure 3. Average forward current versus

ambient temperature (

δ = 0.5)

1216

2024

2832

3640

P(W)

F(AV)

δ = 1

δ = 0.5

δ = 0.2

δ = 0.1

δ = 0.05

δ = t / T

(A)

F(AV)

100

125

150

I(A)

F(AV)

Rth(j-a) = Rth(j-c)

(°C)

amb

Figure 4. Normalized avalanche power derating

versus pulse duration (Tj = 125 °C)

Figure 5. Relative variation of thermal

impedance junction to case versus pulse

duration

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Z/R

th(j-c)

Single pulse

t(s)

Figure 6. Reverse leakage current versus

reverse voltage applied (typical values)

Figure 7. Junction capacitance versus reverse

voltage applied (typical values)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

3040

5060

I (mA)

V(V)

T = 25 °C

T = 50 °C

T = 75 °C

T = 125 °C

T = 150 °C

T = 100 °C

Obsolete

Product(s)

- Obsolete

Product(s)

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