5

OPA4188

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SBOS641D – JUNE 2012 – REVISED SEPTEMBER 2016

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Copyright © 2012–2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.5-V beyond the supply rails should

be current-limited to 10 mA or less.

(3)

Short-circuit to ground, one amplifier per package.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Supply voltage

±20

40 (single supply)

V

Signal input

terminals(2)

Voltage

(V–) – 0.5

(V+) + 0.5

V

Current

±10

mA

Output short circuit(3)

Continuous

Temperature

Operating, TA

–55

150

°C

Junction, TJ

150

°C

Storage, Tstg

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic

discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1)

±2000

V

Charged device model (CDM), per JEDEC specification JESD22-C101, all

pins(2)

±1000

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Power supply voltage, (V+)-(V–)

4 (±2)

36 (±18)

V

Ambient temperature, TA

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics (SPRA953).

7.4 Thermal Information

THERMAL METRIC(1)

OPA4188

UNIT

D (SOIC)

PW (TSSOP)

14 PINS

14 PINS

RθJA

Junction-to-ambient thermal resistance

93.2

106.9

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

51.8

24.4

°C/W

RθJB

Junction-to-board thermal resistance

49.4

59.3

°C/W

ψJT

Junction-to-top characterization parameter

13.5

0.6

°C/W

ψJB

Junction-to-board characterization parameter

42.2

54.3

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

N/A

°C/W