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OPA835IDBVT Datasheet(PDF) 7 Page - Texas Instruments

Part # OPA835IDBVT
Description  OPAx835 Ultra-Low-Power, Rail-to-Rail Out, Negative Rail In, VFB Op Amp
PDF  63 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

OPA835IDBVT Datasheet(HTML) 7 Page - Texas Instruments

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7.5 Thermal Information: OPA2835
THERMAL METRIC(1)
OPA2835
UNIT
D
(SOIC)
DGS
(VSSOP)
RUN
(QFN)
RMC
(UQFN)
8 PINS
10 PINS
10 PINS
10 PINS
RθJA
Junction-to-ambient thermal resistance
150.1
206
145.8
143.2
°C/W
RθJCtop
Junction-to-case (top) thermal resistance
83.8
75.3
75.1
49.0
°C/W
RθJB
Junction-to-board thermal resistance
68.4
96.2
38.9
61.9
°C/W
ψJT
Junction-to-top characterization parameter
33.0
12.9
13.5
3.3
°C/W
ψJB
Junction-to-board characterization parameter
67.9
94.6
104.5
61.9
°C/W
(1)
For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics (SPRA953).
7.6 Electrical Characteristics: VS = 2.7 V
at VS+ = +2.7 V, VS– = 0 V, VOUT = 1 VPP, RF = 0 Ω, RL = 2 kΩ, G = 1 V/V, input and output referenced to mid-supply, VIN_CM =
mid-supply – 0.5 V. TA = 25°C, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP MAX
UNIT
TEST
LEVEL(1)
AC PERFORMANCE
Small-signal bandwidth
VOUT = 100 mVPP, G = 1
51
MHz
C
VOUT = 100 mVPP, G = 2
22.5
VOUT = 100 mVPP, G = 5
7.2
VOUT = 100 mVPP, G = 10
3
Gain-bandwidth product
VOUT = 100 mVPP, G = 10
30
MHz
C
Large-signal bandwidth
VOUT = 1 VPP, G = 1
24
MHz
C
Bandwidth for 0.1-dB flatness
VOUT = 1 VPP, G = 2
4
MHz
C
Slew rate, rise
VOUT = 1 VSTEP, G = 2
110
V/µs
C
Slew rate, fall
VOUT = 1 VSTEP, G = 2
130
V/µs
C
Rise time
VOUT = 1 VSTEP, G = 2
9.5
ns
C
Fall time
VOUT = 1 VSTEP, G = 2
9
ns
C
Settling time to 1%, rise
VOUT = 1 VSTEP, G = 2
35
ns
C
Settling time to 1%, fall
VOUT = 1 VSTEP, G = 2
30
ns
C
Settling time to 0.1%, rise
VOUT = 1 VSTEP, G = 2
60
ns
C
Settling time to 0.1%, fall
VOUT = 1 VSTEP, G = 2
65
ns
C
Settling time to 0.01%, rise
VOUT = 1 VSTEP, G = 2
120
ns
C
Settling time to 0.01%, rise
VOUT = 1 VSTEP, G = 2
90
ns
C
Overshoot/Undershoot
VOUT = 1 VSTEP, G = 2
0.5%/0.2%
C
Second-order harmonic distortion
f = 10 kHz, VIN_CM = mid-supply – 0.5 V
–133
dBc
C
f = 100 kHz, VIN_CM = mid-supply – 0.5 V
–110
f = 1 MHz, VIN_CM = mid-supply – 0.5 V
–73
Third-order harmonic distortion
f = 10 kHz, VIN_CM = mid-supply – 0.5 V
–137
dBc
C
f = 100 kHz, VIN_CM = mid-supply – 0.5 V
–125
f = 1 MHz, VIN_CM = mid-supply – 0.5 V
–78
Second-order intermodulation distortion
f = 1 MHz, 200-kHz Tone Spacing,
VOUT Envelope = 1 VPP,
VIN_CM = mid-supply – 0.5 V
–75
dBc
C
Third-order intermodulation distortion
f = 1 MHz, 200-kHz Tone Spacing,
VOUT Envelope = 1 VPP,
VIN_CM = mid-supply – 0.5 V
–81
dBc
C
Input voltage noise
f = 100 kHz
9.3
nV/√ Hz
C
Voltage noise 1/f corner frequency
147
Hz
C
www.ti.com
OPA835, OPA2835
SLOS713J – JANUARY 2011 – REVISED MARCH 2021
Copyright © 2022 Texas Instruments Incorporated
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Product Folder Links: OPA835 OPA2835



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