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OPA836IDBVT Datasheet(PDF) 8 Page - Texas Instruments

Part # OPA836IDBVT
Description  OPAx836 Very-Low-Power, Rail-to-Rail Out, Negative Rail In, Voltage-Feedback Operational Amplifiers
PDF  66 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

OPA836IDBVT Datasheet(HTML) 8 Page - Texas Instruments

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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
MAX
UNIT
VS– to VS+
Supply voltage
5.5
V
VI
Input voltage
VS– – 0.7
VS+ + 0.7
V
VID
Differential input voltage
1
V
II
Continuous input current
0.85
mA
IO
Continuous output current
60
mA
Continuous power dissipation
See Section 7.4
and
Section 7.5
TJ
Maximum junction temperature
150
°C
TA
Operating free-air temperature
–40
125
°C
Tstg
Storage temperature
–65
150
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
7.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±6000
V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
±1000
Machine model
±200
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VS+
Single supply voltage
2.5
5
5.5
V
TA
Ambient temperature
–40
25
125
°C
7.4 Thermal Information: OPA836
THERMAL METRIC(1)
OPA836
UNIT
DBV (SOT23-6) RUN (WQFN-10)
6 PINS
10 PINS
RθJA
Junction-to-ambient thermal resistance
194
145.8
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
129.2
75.1
°C/W
RθJB
Junction-to-board thermal resistance
39.4
38.9
°C/W
ψJT
Junction-to-top characterization parameter
25.6
13.5
°C/W
ψJB
Junction-to-board characterization parameter
38.9
104.5
°C/W
(1)
For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics (SPRA953).
OPA836, OPA2836
SLOS712J – JANUARY 2011 – REVISED MARCH 2021
www.ti.com
8
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Copyright © 2021 Texas Instruments Incorporated
Product Folder Links: OPA836 OPA2836



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