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BSP52 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BSP52 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Silicon NPN Power Transistor BSP52 www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA, IE= 0 90 -- V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA, IB= 0 80 -- V V(BR)EBO Emitte-Base Breakdown Voltage IE= 0.1mA, IC= 0 5 -- V ICEO Collector Cutoff Current VCE= 80V, IB= 0 -- 10 uA IEBO Emitter Cutoff Current VEB= 4V, IC= 0 -- 10 uA hFE1 DC Current Gain IC= 150mA, VCE= 10V 1000 -- hFE2 DC Current Gain IC= 500mA, VCE= 10V 2000 -- VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA, IB= 0.5mA -- 1.3 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A, IB= 1mA -- 1.8 V VBE(sat) Base-Emitter Saturation Voltage IC= 500mA, IB= 0.5mA -- 1.9 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A, IB= 1mA -- 2.2 V PACKAGE OUTLINE (UNIT: mm) |
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